The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Aug. 14, 2019
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Masanobu Tsuchitani, Kanazawa, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
A semiconductor device includes a semiconductor body, a first electrode on a back surface of the semiconductor body, second and third electrodes provided on a front surface of the semiconductor body, a first film linking the second electrode and the third electrode, and a second film between the semiconductor body and the first film. The first film has a higher resistivity than the first semiconductor body, and the second film is insulative. The second film includes a first-film-thickness portion and a second-film-thickness portion. The first-film-thickness portion has a first film thickness along a first direction directed from the first electrode toward the second electrode. The second-film-thickness portion has a second film thickness along the first direction thicker than the first film thickness. The first-film-thickness portion and the second-film-thickness portion surround the second electrode. The first film extends along surfaces of the first-film-thickness portion and the second-film-thickness portion.