The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Nov. 15, 2019
Nanohenry, Inc., San Diego, CA (US);
Osman Ersed Akcasu, San Diego, CA (US);
NanoHenry Inc., San Diego, CA (US);
Abstract
A method is provided for fabricating thick silicon oxide structures, such as an embedded inductor. A Deep Reactive Ion Etch (DREI) etches the top silicon layer of a substrate to form high aspect ratio Si features, called trench texturing. The Si features are oxidized to form silicon oxide features. Adjacent Si features are separated by a trench width (S(0)), so that after oxidation, adjacent Si oxide features are formed separated by trench width (S(t)), where S(t)≤S(0) (e.g., S(t)=0). If the Si features have a width W(0)>1.2728 S(0), then the adjacent silicon oxide features form an amorphously merged silicon oxide feature with a planar top surface. The silicon oxide features have a height (H(t)) responsive to the trench width (S(0)), the Si feature width (W(t)), and the Si feature aspect ratio. After oxidation, inductor metal is deposited in trenches where W(0)<1.2728 S(0).