The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Jul. 10, 2017
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventor:

Steffen Fritz, Wurmberg, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G02B 5/02 (2006.01); H04N 5/355 (2011.01); H04N 5/378 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); G02B 5/0205 (2013.01); H04N 5/3559 (2013.01); H04N 5/35563 (2013.01); H04N 5/378 (2013.01); H04N 5/37452 (2013.01); H04N 5/37457 (2013.01);
Abstract

CMOS pixel having a dual conversion gain readout circuit, including at least one first photodiode (PD), a diffusion region (FD) having a first capacitance (CFD) for accommodating a charge of the at least one first photodiode (PD), the dual conversion gain readout circuit being designed to read out the charge of the diffusion region (FD) with the aid of a first amplification factor and with the aid of a second amplification factor, the CMOS pixel including at least one second photodiode (PD), the diffusion region (FD) furthermore being designed to accommodate a charge of the at least one second photodiode (PD), and the dual conversion gain readout circuit being designed to read out the charge of the diffusion region (FD) with the aid of at least one third amplification factor and at least one fourth amplification factor.


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