The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Mar. 12, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Nayuta Kariya, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 27/11556 (2017.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 21/31111 (2013.01);
Abstract

According to one embodiment, first and second conductive layers are stacked in a first direction. The second conductive layers are spaced from the first conductive layers. Insulation regions are provided between the first and second conductive layers. A pillar is arranged between the first and second conductive layers and between the insulation regions. The pillar includes a charge storage film, a first insulation film, and a semiconductor layer, which are provided sequentially from the first conductive layers. A second insulation film is provided between the charge storage film and the first conductive layers. A portion of the charge storage film is provided between one of the insulation regions and the first conductive layers at an end of a portion where the first conductive layers and the pillar face each other.


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