The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Apr. 11, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Young Hun Kim, Seoul, KR;

Jae Seok Yang, Hwaseong-si, KR;

Hae Wang Lee, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 29/417 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 23/53271 (2013.01); H01L 29/41725 (2013.01);
Abstract

A semiconductor device includes an active region extending in a first direction on a substrate, a buried conductive layer disposed adjacent to the active region on the substrate and extending in the first direction, a gate electrode intersecting the active region and extending in a second direction crossing the first direction, a source/drain layer disposed on the active region on one side of the gate electrode, a gate isolation pattern disposed on the buried conductive layer so as to be disposed adjacent to one end of the gate electrode, and extending in the first direction, and a contact plug disposed on the source/drain layer, electrically connected to the buried conductive layer, and in contact with the gate isolation pattern.


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