The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Dec. 13, 2019
Applicant:
Osram Oled Gmbh, Regensburg, DE;
Inventors:
Assignee:
OSRAM OLED GMBH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 31/0232 (2014.01); H01L 31/0236 (2006.01); H01L 31/0304 (2006.01); H01L 33/00 (2010.01); H01S 5/22 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3213 (2013.01); H01L 21/02389 (2013.01); H01L 31/02327 (2013.01); H01L 31/02366 (2013.01); H01L 31/03044 (2013.01); H01L 33/0075 (2013.01); H01L 33/44 (2013.01); H01S 5/22 (2013.01); H01L 2933/0025 (2013.01);
Abstract
The invention relates to a method for structuring a nitride layer (), comprising the following steps: A) providing a nitride layer () formed with silicon nitride of a first type, B) defining regions () of said nitride layer () to be transformed, and C) inserting the nitride layer () into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer () regions () to be transformed are transformed into oxide regions () formed with silicon oxide, and—remaining nitride layer () regions () remain at least 80% untransformed.