The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Sep. 05, 2019
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Yuya Matsubara, Yokkaichi, JP;
Hiroshi Kubota, Yokkaichi, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31111 (2013.01); H01L 27/11582 (2013.01); H01L 29/40117 (2019.08);
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film on a substrate. The method further includes forming, on the stacked film, a mask layer formed of a tungsten compound and including impurity atoms having a concentration of 1.0×10atoms/cmor more. The method further includes etching the stacked film using the mask layer as an etching mask.