The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10872767 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 22, 2020

Filed:

Sep. 06, 2017
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;

Inventor:

Jingshuai Wang, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B23K 26/12 (2014.01); G02B 19/00 (2006.01); H01L 27/12 (2006.01); B23K 26/06 (2014.01); B23K 26/067 (2006.01); G02B 27/14 (2006.01); H01L 21/67 (2006.01); H01L 29/66 (2006.01); H01S 3/225 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02678 (2013.01); B23K 26/0626 (2013.01); B23K 26/0665 (2013.01); B23K 26/0673 (2013.01); B23K 26/127 (2013.01); B23K 26/128 (2013.01); G02B 19/0019 (2013.01); G02B 19/0023 (2013.01); G02B 19/0047 (2013.01); G02B 27/14 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/02686 (2013.01); H01L 21/02691 (2013.01); H01L 21/67115 (2013.01); H01L 27/1285 (2013.01); H01L 27/1296 (2013.01); H01L 29/66757 (2013.01); H01L 29/66765 (2013.01); H01S 3/225 (2013.01);
Abstract

A laser annealing apparatus, a fabrication method of a polysilicon thin film, and a fabrication method of a thin film transistor are provided. The laser annealing apparatus includes: a laser generator, an optical system and an annealing chamber. The laser generator is configured to emit a laser beam, and the laser beam is guided to the annealing chamber via the optical system. The optical system includes a beam splitter, the beam splitter decomposes the laser beam into a first beam and a second beam, an energy density of the first beam is greater than an energy density of the second beam, and the first beam and the second beam are guided into the annealing chamber for laser annealing.


Find Patent Forward Citations

Wang, Jingshuai. (2020). Laser annealing apparatus, and fabrication methods of polycrystalline silicon thin film and thin film transistor (U.S. Patent No. 10872767). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10872767

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