The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Oct. 30, 2018
Applicant:

Hitachi Metals, Ltd., Tokyo, JP;

Inventors:

Masafumi Kaga, Tokyo, JP;

Tamotsu Kibe, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 7/295 (2006.01); H01B 7/02 (2006.01); H01B 3/44 (2006.01); H01B 3/30 (2006.01);
U.S. Cl.
CPC ...
H01B 7/295 (2013.01); H01B 3/441 (2013.01); H01B 3/447 (2013.01); H01B 7/0291 (2013.01); H01B 3/307 (2013.01); H01B 3/448 (2013.01);
Abstract

An insulated wire having an electrical wire structure capable of reducing a diameter while a direct-current stability property and a flame-retardant property are highly kept is provided. In the insulated wire including: a conductor; a flame-retardant semiconductive layer arranged on an outer periphery of the conductor; an insulating layer arranged on an outer periphery of the flame-retardant semiconductive layer; and a flame-retardant layer arranged on an outer periphery of the insulating layer, an oxygen index of the flame-retardant semiconductive layer defined by JIS K7201-2 is larger than 40, and a volume resistivity of the flame-retardant semiconductive layer defined by JIS C2151 is equal to or smaller than 5.0×10(Ωcm).


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