The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Jul. 17, 2018
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Hitoya Nagasawa, Matsumoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1339 (2006.01); G02F 1/1343 (2006.01); G02F 1/133 (2006.01); G02F 1/1333 (2006.01); G02F 1/1362 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 27/108 (2006.01); G02F 1/1335 (2006.01); G02F 1/03 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1339 (2013.01); G02F 1/0316 (2013.01); G02F 1/1343 (2013.01); G02F 1/13306 (2013.01); G02F 1/133345 (2013.01); G02F 1/133512 (2013.01); G02F 1/136286 (2013.01); H01L 27/124 (2013.01); H01L 29/78633 (2013.01); H01L 29/78648 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01);
Abstract

Provided are an electro-optical device and an electronic apparatus enabling a channel length of a transistor provided in a peripheral circuit to be set to an appropriate dimension even when a region available for disposing the peripheral circuit has a reduced width. A plurality of N-channel type transistors formed in a scan line drive circuit of an electro-optical device each include a light-shielding layer, an insulating layer, a semiconductor layer, a gate insulating layer, and a gate electrode laminated one on another in order on the one surface side of a first substrate, and a slit overlapping a channel region in planer view extends in a channel width direction to the light-shielding layer. Therefore, in the semiconductor layer, step part reflecting a shape of each of end portions of the light-shielding layer via the insulating layer extend in the channel width direction in the channel region.


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