The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Jun. 29, 2018
Applicant:

Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;

Inventors:

Horst Theuss, Wenzenbach, DE;

Bernhard Knott, Neumarkt, DE;

Thoralf Kautzsch, Dresden, DE;

Mirko Vogt, Dresden, DE;

Maik Stegemann, Pesterwitz, DE;

Andre Roeth, Dresden, DE;

Marco Haubold, Dresden, DE;

Heiko Froehlich, Radebeul, DE;

Wolfram Langheinrich, Dresden, DE;

Steffen Bieselt, Stadt Wehlen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 29/84 (2006.01); H01L 21/00 (2006.01); B81B 7/00 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0045 (2013.01); B81B 3/0072 (2013.01); B81B 7/0032 (2013.01); B81C 1/00325 (2013.01); H01L 21/56 (2013.01); H01L 23/528 (2013.01); H01L 23/562 (2013.01); B81B 2201/02 (2013.01);
Abstract

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.


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