The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Oct. 23, 2019
Applicants:

Lg Display Co., Ltd., Seoul, KR;

Korea University Research and Business Foundation, Seoul, KR;

Inventors:

Kiseok Chang, Paju-si, KR;

Kwang Seob Jeong, Seoul, KR;

Yunchang Choi, Anyang-si, KR;

Jihwan Jung, Seoul, KR;

JeongMin Moon, Goyang-si, KR;

SoonShin Jung, Paju-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); C09K 11/62 (2006.01); B82Y 40/00 (2011.01); B82Y 20/00 (2011.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); C09K 11/62 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/02601 (2013.01); H01L 2933/0041 (2013.01);
Abstract

Provided is a method of manufacturing gallium nitride quantum dots. The method includes the steps of: preparing a gallium precursor solution by heating a mixture prepared by dissolving a gallium halide and an organic ligand in a solvent; heating the gallium precursor solution to obtain a heated gallium precursor solution; hot-injecting a nitrogen precursor into the heated gallium precursor solution at a heating temperature to produce gallium nitride; growing the gallium nitride while maintaining the heating temperature, thereby producing a growth-completed gallium nitride; and cooling a solution including the growth-completed gallium nitride to produce gallium nitride quantum dots in a colloid state.


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