The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Feb. 27, 2020
Applicant:
Nichia Corporation, Anan, JP;
Inventor:
Shuji Shioji, Komatsushima, JP;
Assignee:
NICHIA CORPORATION, Anan, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/46 (2010.01); H01L 23/00 (2006.01); H01L 33/40 (2010.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 23/29 (2006.01); H01L 33/60 (2010.01); H01L 21/78 (2006.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/32 (2010.01); H01L 33/64 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 21/02266 (2013.01); H01L 21/78 (2013.01); H01L 23/291 (2013.01); H01L 24/32 (2013.01); H01L 29/1608 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/405 (2013.01); H01L 33/60 (2013.01); H01L 33/0095 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 33/641 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/15787 (2013.01); H01L 2933/0016 (2013.01);
Abstract
A method for manufacturing a semiconductor element includes providing a semiconductor layer on a carbide substrate, the carbide substrate having a semiconductor layer contact surface connected to the semiconductor layer and a reflective layer contact surface opposite to the semiconductor layer contact surface. A reflective layer is provided on the reflective layer contact surface of the carbide substrate. The reflective layer contains silver and at least one of oxide particles and nitride particles.