The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Dec. 20, 2016
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Indo Chung, Seoul, KR;

Mihee Heo, Seoul, KR;

Juhong Yang, Seoul, KR;

Eunjoo Lee, Seoul, KR;

Jeongbeom Nam, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0368 (2006.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1872 (2013.01); H01L 31/02167 (2013.01); H01L 31/02363 (2013.01); H01L 31/022441 (2013.01); H01L 31/0368 (2013.01); H01L 31/0682 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

Disclosed is a solar cell including a semiconductor substrate, a protective-film layer on a surface of the semiconductor substrate, a polycrystalline semiconductor layer over the protective-film layer, a first conductive area formed by selectively doping the semiconductor layer with a first conductive dopant, a second conductive area doped with a second conductive dopant and located between neighboring portions of the first conductive area, an undoped barrier area located between the first conductive area and the second conductive area, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. Each of the first conductive area and the second conductive area includes a second crystalline area having a crystalline structure different from that of the barrier area, and the second crystalline areas of the first and second conductive areas include a second polycrystalline area and a fourth crystalline area having different depths.


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