The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Aug. 26, 2020
Applicant:

Soltrium Advanced Materials Technology, Ltd. Suzhou, ShenZhen, CN;

Inventors:

Xiaoli Liu, Shenzhen, CN;

Fengzhen Sun, Shenzhen, CN;

Yu Li, Shenzhen, CN;

Delin Li, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/16 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01B 1/22 (2006.01); B41M 3/00 (2006.01); B22F 1/00 (2006.01); B05D 5/12 (2006.01); B41M 7/00 (2006.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022425 (2013.01); B05D 5/12 (2013.01); B22F 1/0074 (2013.01); B41M 3/006 (2013.01); B41M 7/009 (2013.01); H01B 1/16 (2013.01); H01B 1/22 (2013.01); H01L 31/068 (2013.01); H01L 31/18 (2013.01); B22F 2301/255 (2013.01); B22F 2302/25 (2013.01); H01L 31/02168 (2013.01);
Abstract

A front-side conductive paste for a crystalline silicon solar cell is provided. The front-side conductive paste for a crystalline silicon solar cell includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent, where based on 100% by mole of the oxide etching agent, the oxide etching agent includes 15-30% of PbO; 25-40% of TeO; 8.0-15.0% of LiO; 9.0-20.0% of SiO; 5.0-15.0% of BiO; 0.5-10.0% of ZnO; and either one or both of 0.1-10.0% of MgO and 0.1-10.0% of CaO; and no more than 5.0% of an oxide of additional metal elements. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.


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