The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Feb. 14, 2018
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Priyono Tri Sulistyanto, Yogyakarta, ID;
Manoj Kumar, Dhanbad, IN;
Chia-Hao Lee, New Taipei, TW;
Chih-Cherng Liao, Jhudong Township, TW;
Shang-Hui Tu, Jhubei, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device, including an insulator formed on a top surface of a semiconductor substrate, a semiconductor layer, containing a first region of a first conductivity type, formed on the insulator layer, wherein the first region is a P+ region or an N+ region, a second region of a second conductivity type in direct contact with the first region and forming a P-N junction with the first region, wherein the P-N junction comprises a first portion parallel to the top surface of the semiconductor substrate, and the second region is the semiconductor substrate and partially covered by the semiconductor layer, a first metallization region in electrical contact with the first region and a second metallization region in electrical contact with the second region.