The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Dec. 27, 2018
Fuji Electric Co., Ltd., Kawasaki, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device includes a semiconductor substrate, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the second conductivity type, a first semiconductor region of the first conductivity type, a second semiconductor region of the first conductivity type, a gate insulating film, and a gate electrode. A threshold voltage of the semiconductor device is higher than forward voltage of a built-in PN diode constituted by the second semiconductor layer, the semiconductor substrate, and the first semiconductor layer. Thus, when high electric potential is applied to a source electrode and the built-in PN diode is driven, the generation of crystal effects may be suppressed.