The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Mar. 14, 2019
Rohm Co., Ltd., Kyoto, JP;
Kenichi Yoshimochi, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor device includes: a Si substrate having a surface and a rear surface; a first nitride semiconductor layer arranged on the surface of the Si substrate and constituting an electron transit layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and constituting an electron supply layer; a gate electrode arranged on the second nitride semiconductor layer; a source electrode and a drain electrode arranged on the second nitride semiconductor layer so as to be separated from the gate electrode with the gate electrode interposed therebetween, and electrically connected to the second nitride semiconductor layer; at least one recess formed on the Si substrate and recessed from the rear surface toward the surface of the Si substrate; and a thermal conductor embedded in the at least one recess and made of material having a thermal conductivity higher than a thermal conductivity of the Si substrate.