The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Mar. 01, 2019
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Hung Hung, Kawasaki Kanagawa, JP;
Akira Yoshioka, Yokohama Kanagawa, JP;
Toru Sugiyama, Musashino Tokyo, JP;
Masaaki Iwai, Yokohama Kanagawa, JP;
Naonori Hosokawa, Yokohama Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes first and second nitride semiconductor layers, a first electrode electrically connected to the first nitride semiconductor layer, a second electrode electrically connected to the first nitride semiconductor layer, a gate electrode between the first and second electrodes, a first field plate electrode electrically connected to the first electrode, a second field plate electrode between the gate electrode and the second electrode and electrically connected to the first electrode, a first conductive layer on the gate electrode, and a second conductive layer on the first conductive layer. A distance between the gate electrode and the second field plate electrode in a lateral direction is shorter than a distance between the first conductive layer and the second field plate electrode in the lateral direction, and is equal to or shorter than a distance between the second conductive layer and the second field plate electrode.