The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Dec. 03, 2018
Applicant:
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute, JP;
Inventors:
Hiroko Iguchi, Nagakute, JP;
Tetsuo Narita, Nagakute, JP;
Assignee:
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 31/0304 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/861 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/2656 (2013.01); H01L 21/26553 (2013.01); H01L 29/0619 (2013.01); H01L 29/861 (2013.01); H01L 31/03044 (2013.01); H01L 29/045 (2013.01);
Abstract
A group III nitride semiconductor substrate may include: a p-type conduction region into which a group II element has been implanted in a depth direction of the group III nitride semiconductor substrate from a surface of the group III nitride semiconductor substrate, the p-type conduction region having p-type conductivity, wherein hydrogen has been implanted from the p-type conduction region across an n-type conduction region adjacent to the p-type conduction region in the depth direction of the group III nitride semiconductor substrate.