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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10868041 B1

PDFFull Text
Date of Patent:
Dec. 15, 2020

Filed:

Apr. 08, 2020

3d semiconductor devices including a supporter and methods of forming the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang Jun Hong, Hwaseong-si, KR;

Ee Jou Kim, Hwaseong-si, KR;

Joong Shik Shin, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co, Ltd.;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 21/768 (2006.01); H01L 29/792 (2006.01); H01L 27/11573 (2017.01); H01L 27/11551 (2017.01); H01L 27/11524 (2017.01); H01L 27/11529 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/76877 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 27/11551 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 29/7926 (2013.01);
Abstract

A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.

Find Patent Forward Citations

Hong, Sang. (2020). 3d semiconductor devices including a supporter and methods of forming the same (U.S. Patent No. 10868041). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10868041

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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