The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Mar. 19, 2019
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Shih-Ping Lee, Hsinchu, TW;
Shyng-Yeuan Che, Hsinchu County, TW;
Hsiao-Pei Lin, Miaoli County, TW;
Po-Yi Wu, Taipei, TW;
Kuo-Fang Huang, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
Provided is a memory structure including first and second transistors, an isolation structure, a conductive layer and a capacitor. Each of the first and second transistors includes a gate disposed on the substrate and source/drain regions disposed in the substrate. The isolation structure is disposed in the substrate between the first and second transistors. The conductive layer is disposed above the first and second transistors and includes a circuit portion and a dummy portion. The circuit portion is electrically connected to the first and second transistors. The dummy portion is located above the isolation structure. The capacitor is disposed between the first and second transistors. The capacitor includes a body portion and first and second extension portions. The first and second extension portions extend from the body portion to the source/drain regions of the first and the second transistors, respectively. The first and second extension portions are disposed between the circuit portion and the dummy portion, respectively.