The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Sep. 11, 2019
Applicant:
Tdk Corporation, Tokyo, JP;
Inventors:
Hironori Chiba, Tokyo, JP;
Toshiyuki Abe, Tokyo, JP;
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/538 (2006.01); H01L 25/07 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H02M 3/158 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 23/3121 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/20 (2013.01); H01L 25/072 (2013.01); H01L 2224/214 (2013.01); H01L 2924/13091 (2013.01); H02M 3/158 (2013.01);
Abstract
Disclosed herein is a MOS transistor embedded substrate that includes first and second MOS transistors each having a source electrode formed on one surface and a drain electrode formed on other surface, and an insulation resin layer in which the first and second MOS transistors are embedded such that the source electrode of the first MOS transistor and the drain electrode of the second MOS transistor face a same direction and that the drain electrode of the first MOS transistor and the source electrode of the second MOS transistor face a same direction.