The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Sep. 19, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sang Hoon Ahn, Goyang-si, KR;
Tae Soo Kim, Bucheon-si, KR;
Jong Min Baek, Seoul, KR;
Woo Kyung You, Incheon, KR;
Thomas Oszinda, Hwaseong-si, KR;
Byung Hee Kim, Seoul, KR;
Nae In Lee, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/482 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 21/7682 (2013.01); H01L 23/4821 (2013.01); H01L 23/5329 (2013.01); H01L 23/5222 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 2221/1042 (2013.01);
Abstract
A semiconductor device includes an element layer, a plurality of first interconnect lines on the element layer, a first insulation layer including carbon having a uniform concentration distribution between the first interconnect lines, a plurality of second interconnect lines spaced from the first interconnect lines, and a second insulation layer between the second interconnect lines. An air spacing is included between the second interconnect lines.