The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jan. 23, 2020
Denso Corporation, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A manufacturing method of a semiconductor device includes: forming a second conductive type layer over a first conductive type layer; and forming a trench by etching the second conductivity type layer by a plasma etching process to expose the first conductivity type layer. The etching of the second conductivity type layer includes: performing a spectroscopic analysis of light emission of plasma; detecting an interface between the first conductivity type layer and the second conductivity type layer based on a change in emission intensity; and stopping the etching of the second conductivity type layer when an end point is determined based on a detection result of the interface.