The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Feb. 12, 2019
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiroaki Yoda, Kanagawa, JP;

Satoshi Takaya, Kanagawa, JP;

Yuichi Ohsawa, Kanagawa, JP;

Naoharu Shimomura, Tokyo, JP;

Katsuhiko Koui, Kanagawa, JP;

Yushi Kato, Tokyo, JP;

Shinobu Fujita, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/04 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/15 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); H01L 43/04 (2013.01);
Abstract

According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.


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