The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Jul. 30, 2019
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Hajime Kimura, Kanagawa, JP;

Yutaka Shionoiri, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 5/00 (2006.01); G09G 3/36 (2006.01); H03K 19/0185 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
G09G 5/003 (2013.01); G09G 3/36 (2013.01); H01L 27/124 (2013.01); H01L 27/1255 (2013.01); H03K 19/018507 (2013.01); G09G 2310/0267 (2013.01); G09G 2310/0275 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/0289 (2013.01); G09G 2330/021 (2013.01);
Abstract

A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor, the gate terminal of a first transistoris brought into a floating state. At this time, the first transistoris ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistoris increased, a potential at the gate terminal of the first transistoris increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.


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