The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Jan. 28, 2019
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventor:

Messaoud Bedjaoui, Voreppe, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29C 65/48 (2006.01); B29C 65/00 (2006.01); B32B 17/10 (2006.01); B32B 37/12 (2006.01); B32B 37/18 (2006.01); B32B 37/00 (2006.01); H01M 2/08 (2006.01); B81C 1/00 (2006.01); H01M 10/052 (2010.01); H01L 23/29 (2006.01); H01L 21/56 (2006.01); G06F 13/42 (2006.01); H01M 10/04 (2006.01); H01L 23/31 (2006.01); H01M 2/02 (2006.01); B81B 7/00 (2006.01); H01M 10/058 (2010.01); H01M 10/0562 (2010.01); H01M 6/18 (2006.01); H01M 6/40 (2006.01); C03B 5/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00285 (2013.01); B81B 7/0038 (2013.01); G06F 13/42 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 23/291 (2013.01); H01L 23/3135 (2013.01); H01M 2/0202 (2013.01); H01M 2/028 (2013.01); H01M 2/08 (2013.01); H01M 10/0436 (2013.01); H01M 10/052 (2013.01); H01M 10/058 (2013.01); B29C 65/48 (2013.01); B29C 66/03 (2013.01); B29C 66/45 (2013.01); B32B 17/10036 (2013.01); B32B 17/1099 (2013.01); B32B 17/10146 (2013.01); B32B 17/10155 (2013.01); B32B 17/10908 (2013.01); B32B 37/1207 (2013.01); B32B 37/18 (2013.01); B32B 2037/1253 (2013.01); B81B 2207/09 (2013.01); B81C 2203/0181 (2013.01); C03B 5/00 (2013.01); H01M 6/18 (2013.01); H01M 6/40 (2013.01); H01M 10/0562 (2013.01); H01M 2002/0297 (2013.01);
Abstract

Process for encapsulation of a microelectronic device comprising the following steps in sequence: supply a support substrate comprising a first principal face on which a microelectronic device is placed, a second principal face, and a lateral face, deposit a bonding layer on the first principal face of the substrate, position an encapsulation cover comprising a first principal face, a second principal face, and a lateral face, on the bonding layer, deposit a lateral protection layer on: the lateral face and the periphery of the second principal face of the support substrate, the lateral face and the periphery of the second principal face of the encapsulation cover, the lateral protection layer delimiting a protected zone, thinning of the second principal face of the support substrate and/or the second principal face of the encapsulation cover outside the protected zone.


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