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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10863587 B1

PDFFull Text
Date of Patent:
Dec. 08, 2020

Filed:

Feb. 06, 2017

Ceramic structure, method for manufacturing the same, and member for semiconductor manufacturing apparatus

Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Kyohei Atsuji, Nagoya, JP;

Noboru Nishimura, Nagoya, JP;

Yuji Katsuda, Tsushima, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:

Burr & Brown, PLLC

Primary Examiner:

Ibrahime A Abraham

Assistant Examiner:

Chris Q Liu

Int. Cl.
CPC ...
H05B 3/28 (2006.01); C04B 37/00 (2006.01); C04B 35/645 (2006.01); C04B 35/581 (2006.01); H05B 3/26 (2006.01); H01L 21/67 (2006.01); H05B 3/14 (2006.01); C04B 37/02 (2006.01); H05B 1/02 (2006.01); H05B 3/12 (2006.01);
U.S. Cl.
CPC ...
H05B 3/283 (2013.01); C04B 35/581 (2013.01); C04B 35/645 (2013.01); C04B 37/001 (2013.01); C04B 37/021 (2013.01); H01L 21/67103 (2013.01); H05B 1/0233 (2013.01); H05B 3/12 (2013.01); H05B 3/143 (2013.01); H05B 3/265 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6586 (2013.01); C04B 2235/72 (2013.01); C04B 2235/723 (2013.01); C04B 2237/366 (2013.01); C04B 2237/408 (2013.01); C04B 2237/68 (2013.01); C04B 2237/84 (2013.01); H05B 2203/013 (2013.01); H05B 2203/017 (2013.01);
Abstract

A ceramic structureincludes a heater electrodewithin a disk-shaped AlN ceramic substrate. The heater electrodecontains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrateand a thermal expansion coefficient of the heater electrodeat a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.

Find Patent Forward Citations

Atsuji, Kyohei. (2020). Ceramic structure, method for manufacturing the same, and member for semiconductor manufacturing apparatus (U.S. Patent No. 10863587). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10863587

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