The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Feb. 20, 2019
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;
Inventor:
Jong myeong Kim, Suwon-si, KR;
Assignee:
Samsung Electro-Mechanics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/22 (2006.01); H03F 3/45 (2006.01); H03F 1/02 (2006.01); H03F 3/24 (2006.01); H03F 3/21 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45192 (2013.01); H03F 1/0277 (2013.01); H03F 1/223 (2013.01); H03F 3/211 (2013.01); H03F 3/213 (2013.01); H03F 3/24 (2013.01);
Abstract
An amplification device having a cascode structure includes an amplification circuit including a first transistor and a second transistor, cascode-connected to each other and receiving an operating voltage to amplify an input signal; a first bias circuit generating a first bias voltage and supplying the first bias voltage to the first transistor; and a second bias circuit generating a second bias voltage based on a control voltage and the operating voltage and supplying the second bias voltage to the second transistor.