The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Jan. 02, 2019
Applicant:

General Electric Company, Schenectady, NY (US);

Inventor:

Saijun Mao, Shanghai, CN;

Assignee:

GENERAL ELECTRIC COMPANY, Schenectady, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/10 (2006.01); H02M 3/335 (2006.01); H02M 1/00 (2006.01); H02M 7/48 (2007.01);
U.S. Cl.
CPC ...
H02M 7/10 (2013.01); H02M 3/33569 (2013.01); H02M 3/33592 (2013.01); H02M 7/103 (2013.01); H02M 2001/0054 (2013.01); H02M 2001/0067 (2013.01); H02M 2007/4815 (2013.01);
Abstract

According to various embodiments, a system and method for a power converter including an inverter and a first voltage multiplier is disclosed. The inverter is configured to convert a first DC voltage into a first AC voltage. The first voltage multiplier is coupled to an output of the inverter and configured to convert the first AC voltage into a second DC voltage higher than a peak value of the first AC voltage. The first voltage multiplier includes a plurality of stages, each stage including two diodes, and each diode in a first stage of the plurality of stages including at least one of a silicon carbide diode and a gallium nitride diode.


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