The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Feb. 24, 2017
Applicant:

Denso Corporation, Kariya, JP;

Inventor:

Teruhiro Tsujioka, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02J 7/00 (2006.01); B60R 16/033 (2006.01); B60R 16/03 (2006.01); H02J 1/00 (2006.01);
U.S. Cl.
CPC ...
H02J 7/0068 (2013.01); B60R 16/03 (2013.01); B60R 16/033 (2013.01); H02J 1/00 (2013.01); H02J 7/00 (2013.01); H02J 7/0029 (2013.01);
Abstract

A reverse current protection circuit includes a MOSFET and an on/off controller. When the on/off controller applies an on-state control voltage to a gate of the MOSFET, a main power supply input through a main power supply line is output to a common connection node via the MOSFET; and when an off-state control voltage is applied to the gate of the MOSFET, the electrical connection between the main power supply line and the common connection node is interrupted to prevent a reverse current. A diode is connected to enable a forward current flowing from a sub power supply line to the common connection node and the reverse current is prevented. The voltage drop of the main power supply, when the on-off controller applies the on-state control to the gate of the MOSFET, is lower than the voltage drop of the sub power supply through the diode.


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