The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Dec. 20, 2018
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Kazuo Fukagai, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 (2006.01); H01S 5/10 (2006.01); H01S 5/223 (2006.01); H01S 5/042 (2006.01); H01S 5/028 (2006.01); H01S 5/16 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/04254 (2019.08); H01S 5/1014 (2013.01); H01S 5/2231 (2013.01); H01S 5/0287 (2013.01); H01S 5/04256 (2019.08); H01S 5/1039 (2013.01); H01S 5/168 (2013.01); H01S 5/2224 (2013.01); H01S 2301/166 (2013.01);
Abstract
A semiconductor device includes a first pair of nitride semiconductor regions, and a current confinement region which includes a first portion, a second portion disposed on a side of the first portion, and a third portion disposed on another side of the first portion. A width of the second portion is larger than a width of the first portion, the width of the second portion is larger than a width between the first pair of nitride semiconductor regions, and both ends of the second portion are covered by the first pair of nitride semiconductor regions, respectively.