The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Apr. 04, 2017
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Hiroyuki Kawahara, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/10 (2006.01); H01S 5/026 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1053 (2013.01); H01S 5/026 (2013.01); H01S 5/0265 (2013.01); H01S 5/10 (2013.01); H01S 5/1003 (2013.01); H01S 5/106 (2013.01); H01S 5/1007 (2013.01); H01S 5/1028 (2013.01); H01S 5/1057 (2013.01); H01S 5/1064 (2013.01); H01S 5/22 (2013.01);
Abstract

A semiconductor device includes a substrate, a semiconductor laser part formed on the substrate and having an active layer with an uniform composition and a first ridge structure, and an adjacent part formed on the substrate, having a core layer with an uniform composition and a second ridge structure, and being an optical modulator or an optical waveguide which is in contact with the semiconductor laser part, wherein the first ridge structure is largest in width at a first contact part which is in contact with the second ridge structure, and the second ridge structure is largest in width at a second contact part which is in contact with the first ridge structure.


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