The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Aug. 30, 2018
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Infrastructure Systems & Solutions Corporation, Kawasaki, JP;

Inventors:

Yasuhiro Harada, Isehara, JP;

Norio Takami, Yokohama, JP;

Tetsuya Sasakawa, Yokohama, JP;

Yusuke Namiki, Yokohama, JP;

Yasunobu Yamashita, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 6/42 (2006.01); H01M 4/485 (2010.01); C01G 33/00 (2006.01); H01M 4/36 (2006.01); H01M 10/0525 (2010.01); H01M 2/30 (2006.01); H01M 2/10 (2006.01); B60L 50/64 (2019.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/485 (2013.01); B60L 50/64 (2019.02); C01G 33/00 (2013.01); H01M 2/1077 (2013.01); H01M 2/30 (2013.01); H01M 4/366 (2013.01); H01M 10/0525 (2013.01); C01P 2002/72 (2013.01); C01P 2002/77 (2013.01); C01P 2004/84 (2013.01); C01P 2006/40 (2013.01); H01M 2004/027 (2013.01); H01M 2220/20 (2013.01);
Abstract

An active material includes an NbTiOphase and at least one Nb-rich phase selected from an NbTiOphase, an NbTiOphase, and an NbTiOphase. The active material satisfies a peak intensity ratio represented by the following Formula (1): 0<I/I≤0.25 (1). In Formula (1), Iis a peak intensity of the maximum peak attributed to the NbTiOphase and appealing at 2θ of 26.0±0.1° in a wide angle X-ray diffraction pattern under CuKα rays as an X-ray source, and Iis a peak intensity of the maximum peak attributed to the at least one Nb-rich phase and appearing at 2θ of 24.9±0.2° in the diffraction pattern.


Find Patent Forward Citations

Loading…