The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Feb. 22, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Inhyuk Son, Yongin-si, KR;
Jonghwan Park, Yongin-si, KR;
Jaejun Chang, Seoul, KR;
Junhwan Ku, Seongnam-si, KR;
Xiangshu Li, Hwaseong-si, KR;
Jaeman Choi, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/62 (2006.01); H01B 1/04 (2006.01); B82Y 30/00 (2011.01); H01J 1/304 (2006.01); H01L 35/18 (2006.01); H01L 35/20 (2006.01); H01L 35/22 (2006.01); H01L 35/32 (2006.01); H01M 4/13 (2010.01); H01M 4/48 (2010.01); F21K 2/08 (2006.01);
U.S. Cl.
CPC ...
H01M 4/364 (2013.01); B82Y 30/00 (2013.01); F21K 2/08 (2013.01); H01B 1/04 (2013.01); H01J 1/304 (2013.01); H01L 35/18 (2013.01); H01L 35/20 (2013.01); H01L 35/22 (2013.01); H01L 35/32 (2013.01); H01M 4/13 (2013.01); H01M 4/483 (2013.01); H01M 4/625 (2013.01); H01J 2201/30461 (2013.01); H01J 2201/30496 (2013.01);
Abstract
A composite including: at least one selected from a silicon oxide of the formula SiOand a silicon oxide of the formula SiOwherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.