The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Mar. 13, 2014
Applicant:

Sion Power Corporation, Tucson, AZ (US);

Inventors:

Oliver Gronwald, Heusenstamm, DE;

Ruediger Schmidt, Paderborn, DE;

Martin Weber, Maikammer, DE;

Ingrid Haupt, Frankenthal, DE;

Ursula Huber-Moulliet, Frankenthal, DE;

Nicole Janssen, Bermesheim, DE;

Yuriy V. Mikhaylik, Tucson, AZ (US);

Bala Sankaran, Shelby Township, MI (US);

David L. Coleman, Corona De Tucson, AZ (US);

Assignee:

Sion Power Corporation, Tucson, AZ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 4/139 (2010.01); H01M 4/04 (2006.01); H01M 4/134 (2010.01); H01M 10/0585 (2010.01); H01M 10/058 (2010.01); H01M 2/16 (2006.01); H01M 10/0525 (2010.01); H01M 4/1395 (2010.01); H01M 4/38 (2006.01); H01M 4/48 (2010.01); H01M 4/66 (2006.01); H01M 4/136 (2010.01); H01M 10/052 (2010.01); H01M 2/14 (2006.01); H01M 4/1391 (2010.01); H01M 4/13 (2010.01); H01M 4/1397 (2010.01); H01M 4/131 (2010.01);
U.S. Cl.
CPC ...
H01M 4/139 (2013.01); H01M 2/145 (2013.01); H01M 2/168 (2013.01); H01M 2/1653 (2013.01); H01M 2/1673 (2013.01); H01M 4/0402 (2013.01); H01M 4/13 (2013.01); H01M 4/131 (2013.01); H01M 4/134 (2013.01); H01M 4/136 (2013.01); H01M 4/1391 (2013.01); H01M 4/1395 (2013.01); H01M 4/1397 (2013.01); H01M 4/38 (2013.01); H01M 4/382 (2013.01); H01M 4/48 (2013.01); H01M 4/66 (2013.01); H01M 10/052 (2013.01); H01M 10/058 (2013.01); H01M 10/0525 (2013.01); H01M 10/0585 (2013.01);
Abstract

An electrode structure and its method of manufacture are disclosed. The disclosed electrode structures may be manufactured by depositing a first release layer on a first carrier substrate. A first protective layer may be deposited on a surface of the first release layer and a first electroactive material layer may then be deposited on the first protective layer.


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