The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

May. 18, 2017
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Thomas Lehnhardt, Regensburg, DE;

Werner Bergbauer, Windberg, DE;

Jürgen Off, Regensburg, DE;

Lise Lahourcade, Regensburg, DE;

Philipp Drechsel, Regensburg, DE;

Assignee:

OSRAM OLD GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/18 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/18 (2013.01); H01L 33/325 (2013.01); H01L 33/38 (2013.01);
Abstract

A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.


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