The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Dec. 24, 2018
Samsung Display Co., Ltd., Yongin-si, KR;
Yong Su Lee, Hwaseong-si, KR;
Yoon Ho Khang, Yongin-si, KR;
Dong Jo Kim, Yongin-si, KR;
Hyun Jae Na, Seoul, KR;
Sang Ho Park, Suwon-si, KR;
Se Hwan Yu, Seoul, KR;
Chong Sup Chang, Hwaseong-si, KR;
Dae Ho Kim, Daegu, KR;
Jae Neung Kim, Seoul, KR;
Myoung Geun Cha, Seoul, KR;
Sang Gab Kim, Seoul, KR;
Yu-Gwang Jeong, Anyang-si, KR;
SAMSUNG DISPLAY CO., LTD., Yongin, KR;
Abstract
A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.