The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Feb. 11, 2019
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Ilhun Seo, Asan-si, KR;

Yun-Mo Chung, Yongin-si, KR;

Daewoo Lee, Hwaseong-si, KR;

Tak-Young Lee, Anyang-si, KR;

Miyeon Cho, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66757 (2013.01); H01L 27/1225 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 27/3246 (2013.01); H01L 51/5218 (2013.01); H01L 51/5221 (2013.01);
Abstract

A thin film transistor substrate may include a base substrate, a semiconductor member, a gate electrode, a first insulation layer, and a source/drain electrode. The semiconductor member may overlap the base substrate. The gate electrode may overlap the semiconductor member and may be insulated from the semiconductor member. The first insulation layer may be positioned on the gate electrode and may include a first contact hole. The source/drain electrode may include a first discharge hole, may be electrically connected to the semiconductor member, and may be at least partially positioned inside the first contact hole. The first discharge hole may partially expose the semiconductor member.


Find Patent Forward Citations

Loading…