The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Jul. 18, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Ze Chen, Tokyo, JP;
Kazuhiro Shimizu, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/761 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/761 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device includes a well region, a buffer region, an insulating film, an electrode, and an electric field relaxing structure. An impurity concentration in the buffer region is reduced in a direction away from the active region. An end portion of the electrode is located at a position closer to the active region than an end portion of the buffer region. The electric field relaxing structure includes a plurality of RESURF layers each surrounding the buffer region in a plan view and formed in a surface layer of the semiconductor substrate.