The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Dec. 08, 2016
Applicant:

Cree, Inc., Durham, NC (US);

Inventors:

Daniel J. Lichtenwalner, Raleigh, NC (US);

Edward R. Van Brunt, Raleigh, NC (US);

Brett Hull, Raleigh, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/046 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/66068 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/1037 (2013.01); H01L 29/1608 (2013.01);
Abstract

Semiconductor devices include a semiconductor layer structure comprising a drift region that includes a wide band-gap semiconductor material. A shielding pattern is provided in an upper portion of the drift region in an active region of the device and a termination structure is provided in the upper portion of the drift region in a termination region of the device. A gate trench extends into an upper surface of the semiconductor layer structure. The semiconductor layer structure includes a semiconductor layer that extends above and at least partially covers the termination structure.


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