The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Jan. 16, 2017
Applicant:

Ams Sensors Singapore Pte. Ltd., Singapore, SG;

Inventors:

Bernhard Buettgen, Adliswil, CH;

Gözen Köklü, Zurich, CH;

Theodor Walter Loeliger, Uster, CH;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/101 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14616 (2013.01); H01L 31/101 (2013.01); H01L 21/266 (2013.01);
Abstract

A semiconductor device operable to demodulate incident modulated electromagnetic radiation, the semiconductor device comprising: a pinned photodiode structure including a substrate of a first type, an implant layer of a second type disposed within the substrate, first and second auxiliary implant layers of the second type disposed within the substrate and each disposed adjacent to the implant layer of the second type, an implant layer of the first type disposed within the implant layer of the second type and extending into the first and second auxiliary implant layers of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region; first and second transfer gates disposed on a surface of the insulator, the transfer gates being operable to generate a field within the substrate; and first and second floating diffusion implant layers of the second type disposed within the substrate.


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