The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Apr. 17, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seungsoo Hong, Incheon, KR;
JeongYun Lee, Yongin-si, KR;
GeumJung Seong, Seoul, KR;
HyunHo Jung, Seoul, KR;
Minchan Gwak, Hwaseong-si, KR;
Kyungseok Min, Yongin-si, KR;
Youngmook Oh, Hwaseong-si, KR;
Jae-Hoon Woo, Hwaseong-si, KR;
Bora Lim, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a first active pattern and a second active pattern on a substrate, a first gate electrode and a second gate electrode respectively across the first active pattern and the second active pattern, a first insulation pattern between and separating the first and second gate electrodes, a gate spacer on a sidewall of the first gate electrode, on a sidewall of the second gate electrode, and on a sidewall of the first insulation pattern, and a second insulation pattern between the gate spacer and the sidewall of the first insulation pattern, wherein the first gate electrode, the first insulation pattern, and the second gate electrode are arranged along a first direction, and wherein the gate spacer extends in the first direction.