The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Jan. 10, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/82 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 29/42376 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor device includes a substrate having first and second regions, a first gate electrode layer on the first region, and including a first conductive layer, and a second gate electrode layer on the second region, and including the first conductive layer, a second conductive layer on the first conductive layer, and a barrier metal layer on the second conductive layer, wherein an upper surface of the first gate electrode layer is at a lower level than an upper surface of the second gate electrode layer.