The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Nov. 30, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Masaaki Bairo, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0296 (2013.01); H01L 27/0255 (2013.01); H01L 27/0292 (2013.01); H01L 27/1207 (2013.01);
Abstract

Provided is a semiconductor device and a protection element capable of suppressing electrical damage to a MOSFET or the like in a semiconductor substrate. A semiconductor device according to a first aspect of the present technology includes a MOSFET as a protected element formed on a semiconductor substrate and a protection element that suppresses electrical damage to the protected element formed on the semiconductor substrate, in which the protection element includes the semiconductor substrate, one or more layers of well regions formed on the semiconductor substrate, and a diffusion layer formed on the well region. The present technology can be applied to a CMOS image sensor, for example.


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