The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Nov. 27, 2019
SK Hynix Inc., Icheon, KR;
Myoung-Sub Kim, Seongnam, KR;
Tae-Hoon Kim, Seongnam, KR;
Hye-Jung Choi, Icheon, KR;
Seok-Man Hong, Seoul, KR;
SK hynix Inc., Icheon, KR;
Abstract
A semiconductor memory includes: a first line; a second line; a third line; a first memory cell disposed between the first line and the second line at an intersection region of the first line and the second line, the first memory cell including a first selection element layer and a first electrode coupled to the first selection element layer; and a second memory cell disposed between the second line and the third line at an intersection region of the second line and third second line, the second memory cell including a second selection element layer and a second electrode coupled to the second selection element layer. A threshold voltage of the first selection element layer is greater than a threshold voltage of the second selection element layer, and a resistance of the second electrode is greater than a resistance of the first electrode.