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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10859920 B1

PDFFull Text
Date of Patent:
Dec. 08, 2020

Filed:

Aug. 09, 2018

Mask and fabrication method thereof, display panel and touch panel

Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Boe Optoelectronics Technology Co., Ltd., Hefei, CN;

Inventors:

Liqing Liao, Beijing, CN;

Hongmin Li, Beijing, CN;

Jian Tao, Beijing, CN;

Assignees:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Hefei, CN;

Attorney:
Primary Examiner:

Shouxiang Hu

Int. Cl.
CPC ...
G03C 5/00 (2006.01); G03F 7/20 (2006.01); G06F 3/044 (2006.01); G03F 7/00 (2006.01); G03F 1/76 (2012.01); G03F 1/78 (2012.01); G06F 3/041 (2006.01); H01L 21/31 (2006.01); G03F 7/22 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70358 (2013.01); G03F 1/76 (2013.01); G03F 1/78 (2013.01); G03F 7/0005 (2013.01); G03F 7/22 (2013.01); G03F 7/70275 (2013.01); G03F 7/70383 (2013.01); G03F 7/70466 (2013.01); G03F 7/70475 (2013.01); G03F 7/70791 (2013.01); G06F 3/041 (2013.01); G06F 3/044 (2013.01); H01L 21/308 (2013.01); H01L 21/31 (2013.01); H01L 21/31144 (2013.01); G06F 2203/04103 (2013.01);
Abstract

A fabrication method of a mask and a mask, a display panel and a touch panel are provided. The fabrication method of the mask includes: providing a substrate; forming a photoresist material layer on the substrate; and performing at least two scanning exposure processes on the photoresist material layer by using a scanning beam, wherein, each of the at least two scanning exposure processes is performed along a first direction parallel to a surface where the substrate is located, the scanning beam in each of the at least two scanning exposure processes scans the photoresist material layer in a scanning region having a preset width, at least one pair of adjacent scanning regions partially overlap with each other, and a partially overlapping region of the at least one pair of adjacent scanning regions is located in a first region of the mask.

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