The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Aug. 10, 2016
Ltc Co., Ltd., Gyeonggi-do, KR;
Ho-Sung Choi, Gyeonggi-do, KR;
Kwang-Hyun Ryu, Gyeonggi-do, KR;
Jong-Il Bae, Gyeonggi-do, KR;
Jong-Soon Lee, Gyeonggi-do, KR;
Sang-Ku Ha, Incheon, KR;
Hye-Sung Yang, Gyeonggi-do, KR;
Mi-Yeon Han, Gyeonggi-do, KR;
Hyo-Jin Lee, Seoul, KR;
LTC CO., LTD., Gyeonggi-Do, KR;
Abstract
The present disclosure relates to a photoresist stripper composition for manufacturing an LCD, and relates to an integrated photoresist stripper composition capable of being used in all processes for manufacturing a TFT-LCD. More specifically, the present disclosure relates to an aqueous photoresist stripper composition capable of being used in all of transition metal, potential metal and oxide semiconductor wires. The aqueous photoresist stripper composition includes (a) a potential metal and metal oxide corrosion inhibitor, (b) a transition metal corrosion inhibitor, (c) a primary alkanolamine, (d) a cyclic alcohol, (e) water, (f) an aprotic polar organic solvent, and (g) a protic polar organic solvent, and has an excellent ability to remove a degenerated photoresist produced after progressing a hard baked process, an implant process and a dry etch process in a semiconductor or flat display panel process, may be used in aluminum that is a potential metal, copper or silver that is a transition metal, and metal oxide wires at the same time, and may be introduced to organic film and COA processes.