The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Feb. 13, 2018
Applicant:

Lg Chem, Ltd., Seoul, KR;

Inventors:

So Young Choo, Daejeon, KR;

Jin Soo Lee, Daejeon, KR;

Eun Kyu Her, Daejeon, KR;

Bu Gon Shin, Daejeon, KR;

Assignee:

LG CHEM, LTD., Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1337 (2006.01); G02F 1/139 (2006.01); G03F 7/00 (2006.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
G02F 1/13378 (2013.01); G02F 1/1391 (2013.01); G03F 7/0002 (2013.01); G02F 2001/133792 (2013.01); G03F 1/80 (2013.01);
Abstract

Disclosed are a method for forming a pattern for liquid crystal orientation of a zenithal bi-stable liquid crystal panel, a liquid crystal orientation substrate including the pattern formed thereby, and a mask substrate used for forming the pattern. The method includes: (a) depositing a silicon-based compound on a silicon substrate, (b) forming a guide pattern on an upper portion of the deposited silicon-based compound layer by using an imprint lithography, (c) discontinuously exposing the silicon substrate by transferring a pattern from the guide pattern onto the silicon-based compound layer by dry etching, (d) forming a pattern in an asymmetrical form on the silicon substrate by wet etching, (e) removing the part of the remaining silicon-based compound layer, and then hydrophobically treating a pattern surface of the silicon substrate; and (f) transferring a pattern in an asymmetrical form onto a glass substrate by disposing the surface-treated silicon substrate to face the glass substrate, and supplying a dielectric therebetween.


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